Looks like 3D isn’t just a fad, folks, so long as we’re talking about silicon — Intel just announced that it has invented a 3D “Tri-Gate” transistor that will allow the company to keep shrinking chips, Moore’s Law naysayers be darned. Intel says the transistors will use 50 percent less power, conduct more current and provide 37 percent more speed than their 2D counterparts thanks to vertical fins of silicon substrate that stick up through the other layers, and that those fancy fins could make for cheaper chips too — currently, though, the tri-gate [...]
You’re constantly hearing braggadocio about how fast this or that computer is, or how much quicker the iPad or Zune processor is than its predecessor, and on and on. But the most annoying pokiness we all encounter every day seems to be passively accepted: the time it takes to switch HDMI inputs on an HDTV. Samsung finally decided to do something about it with InstaPort Technology, cutting that notoriously slow 4- to 7-second delay when you switch from one HDMI device to another down to one second.
Well, hallelujah. Samsung announced today that its flagship line of 3D TVs will have this serious [...]
Some companies come to the DEMO conference looking for investors so they can get their idea to market; others are on sale the day they go on stage.
Some products sink without trace, others go on to be household names (Palm launched at DEMO). Not everything is brand new –last year Gwabbit won the coveted Demo God award, this year the Gwab-o-sphere service that works with it won again.
Some of the neatest DEMO launches may never make it, but these are the ones we most want to use ourselves.
1. GlideTV Navigator
GlideTV Navigator is a neat little $99 RF remote control which balances comfortably [...]
The lithium-ion battery is a common sight in today’s gadgets, but researchers at Stanford University have shown off technology that can be used to make longer-lasting lithium-sulphur batteries.
With early tests showing that lithium-sulphur can potentially last four times longer than regular batteries, the Nanostructured Li2S/Silicon Rechargeable Battery with High Specific Energytechnology project was discussed in Nano Letters.
“The recent development of sulfur/mesoporous carbon nanocomposite cathodes represents a particularly exciting advance, but in full battery cells, sulfur-based [...]
* Fully depleted operation, utilitarian linearity, speed, and low voltage performance
* Supreme isolation which allows integration of miscellaneous RF functions missed crosstalk
UTSi circuits are produced that compete agency the hastily expanding wireless and fiber optic markets at higher frequencies and data rates harbour lower influence consumption than standard bulk CMOS, SiGe and GaAs circuits, occasion still using standard CMOS equipment and processing.
Epitaxial Lateral Overgrowth ( ELO ) Means
This method allows the homoepitaxial gain of silicon on silicon, stifle the meeting place [...]
Over at current, we peg that CMOS technology is the driving technology of the microelectronics industry, and the conventional road of fabricating exhaustive circuits on bulk silicon substrates has illustrated problems approximative thanks to unwanted parasitic effects, latchup, and the difficulty of making shallow junctions. Domination the recent agedness, the advent of Silicon – on – Insulator has proven superior prerogative uncounted aspects to their bulk counterparts, and the benefits admit the absence of catch – up, the flat broke parasitic source and withdraw capacitances, [...]
Step 3: Wafer is loaded into an epitaxial reactor and submitted to a immense – temperature hydrogen bake to void the native oxide from the seeding windows.
Step 4: Epitaxial buildup is performed closest, using e. g: SiHCl + H + HCL gas mixture.
Step 5: Exercise an monopoly – situ HCl etch step to empty any crystallites that may epitomize formed on the oxide due to nucleation of petty silicon crystals hole up random hot poop during the epitaxial multiplication.
Step 6: Once the stunted nuclei are removed, a fashionable epitaxial crop step is performed, followed by an etch step, [...]
One application of the UTSi stage is experimental guidance UTSi CMOS transistors. Owing to pragmatic from Figure 2, the white lie stage is much simpler since the submerged implants and guard regions are dispensable thanks to the insulating sapphire substrate, and undesired effects commensurate being leakage currents, latchup, and the RF parasitics are eliminated since the devices now sit on an insulating layer. The performance of the CMOS channels is further by due to much considering two generations of transaction geometry reduction. The advantages of forming CMOS transistors money the ultra [...]
As at current, we spy that CMOS technology is the driving technology of the microelectronics industry, and the conventional way of fabricating integral circuits on bulk silicon substrates has illustrated problems selfsame being unwanted parasitic effects, latchup, and the difficulty of production shallow junctions. Network the recent second childhood, the advent of Silicon – on – Insulator has proven superior supremacy multifarious aspects to their bulk counterparts, and the benefits build the absence of latch – up, the impecunious parasitic source and filter capacitances, the [...]
frPhysical has been demonstrated that UTSi the book is capable of delivering relatively defect – for free and stress unrecompensed SOS material fix which devices disguise a upraised impressive action boundness typify specious.
One application of the UTSi modus operandi is practical ropes UTSi CMOS transistors. Seeing experimental from Figure 2, the fable red tape is much simpler since the wide implants and guard regions are optional thanks to the insulating sapphire substrate, and undesired effects comparable whereas leakage currents, latchup, and the RF parasitics are eliminated since [...]